Intrinsic limitations for CMOS with high-k gate dielectrics: Electrically-active grain boundary and oxygen atom defect states

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 439-444

  Lucovsky, Gerald ^a   Lüning, Jan ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPLEXATION; DIELECTRIC MATERIALS; ENERGY GAP; GRAIN BOUNDARIES; PERMITTIVITY;

ATOM DEFECT STATES; BAND EDGE; ELECTRONICALLY ACTIVE DEFECTS;

THIN FILMS;

EID: 33751416093     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546679     Document Type: Conference Paper

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