Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy

Scripta Materialia

Volumn 59, Issue 11, 2008, Pages 1171-1173

  Han, I ^a   Datta, R ^a   Mahajan, S ^a   Bertram, R ^b   Lindow, E ^b   Werkhoven, C ^b   Arena, C ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b GaNotec Inc   (United States)

Author keywords

Atomic force microscopy (AFM); Dislocation; Etching; GaN

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; CORUNDUM; EPITAXIAL LAYERS; ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; OPTICAL ENGINEERING; SCANNING PROBE MICROSCOPY; SEMICONDUCTING GALLIUM; SULFUR COMPOUNDS; TOPOLOGY;

ATOMIC FORCE MICROSCOPY (AFM); DISLOCATION; ETCH-PITS; GAN; GAN EPITAXIAL LAYERS; KOH ETCHING; LOW TEMPERATURES; SURFACE TOPOLOGIES; THREADING DISLOCATIONS;

IMAGING TECHNIQUES;

EID: 52149118673     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2008.07.046     Document Type: Article

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