Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot

Microelectronics Journal

Volumn 38, Issue 6-7, 2007, Pages 663-666

  Xia, Congxin ^a   Jiang, Fengchun ^b   Wei, Shuyi ^a   Zhao, Xu ^a  

^a HENAN NORMAL UNIVERSITY   (China)

^b ZHENGZHOU UNIVERSITY OF LIGHT INDUSTRY   (China)

Author keywords

Donor binding energy; Hydrogenic impurity; Quantum dot

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; GALLIUM NITRIDE; SEMICONDUCTING ZINC COMPOUNDS;

DONOR BINDING ENERGY; HYDROGENIC IMPURITY; IMPURITY POSITION; VARIATIONAL PROCEDURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547468318     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.06.003     Document Type: Article

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