Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots

Computer Physics Communications

Volumn 141, Issue 1, 2001, Pages 66-72

  Li, Yiming ^a   Voskoboynikov, O ^a,b   Lee, C P ^a   Sze, S M ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

Author keywords

Computer simulation; Dot shapes; Electron energy levels; InAs GaAs; Semiconductor quantum dot

Indexed keywords

ALGORITHMS; BOUNDARY CONDITIONS; COMPUTER SIMULATION; FINITE DIFFERENCE METHOD; HAMILTONIANS; ITERATIVE METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

SCHRODINGER EQUATIONS;

ELECTRON ENERGY LEVELS;

EID: 0035889366     PISSN: 00104655     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0010-4655(01)00397-6     Document Type: Article

References (41)