Built-in electric field effect on hydrogenic impurity in wurtzite GaN/AlGaN quantum dot

Applied Surface Science

Volumn 253, Issue 12, 2007, Pages 5345-5348

  Xia, C X ^a   Wei, S Y ^a   Zhao, X ^a  

^a HENAN NORMAL UNIVERSITY   (China)

Author keywords

Built in electric field; Hydrogenic impurity; Quantum dot

Indexed keywords

BINDING ENERGY; GALLIUM NITRIDE; LIGHT POLARIZATION;

BUILT-IN ELECTRIC FIELD; HYDROGENIC IMPURITY; PIEZOELECTRIC POLARIZATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33847647558     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.12.008     Document Type: Article

References (19)

1. Bastard G. Phys. Rev. B 24 (1981) 4714
2. Masumoto Y., and Takagahara T. Semiconductor Quantum Dots (2002), Springer, Berlin
3. Ando T., Arakawa Y., Foruka K., Komiyama S., and Nakashima H. Mesoscopic Physics and Electronics (1998), Springer, Berlin
4. Queisser H.J., and Haller E.E. Science 281 (1998) 945
5. Zhu J.L., and Chen X. Phys. Rev. B 50 (1994) 4497
6. Chuu D.S., Hsiao C.M., and Mei W.N. Phys. Rev. B 46 (1992) 3898
7. Montenegro N.P., and Merchancano S.T.P. Phys. Rev. B 46 (1992) 9780
8. Bose C. J. Appl. Phys. 83 (1998) 3089
9. Mendoza C.I., Vzquez G.J., Castillo-Mussot M.del., and Spector H.N. Phys. Status Solidi C 1 (2004) S74
10. Mendoza C.I., Vazquez G.J., Castillo-Mussot M.del., and Spector H. Phys. Rev. B 71 (2005) 075330
11. Wan S.P., Xia J.B., and Chang K. J. Appl. Phys. 90 (2001) 6210
12. Shi J.J., and Gan Z.Z. J. Appl. Phys. 94 (2003) 407
13. Ramval P., Riblet P., Nomura S., and Tanaka S. J. Appl. Phys. 87 (2000) 3883
14. Ramval P., Tanaka S., and Nomura S. Appl. Phys. Lett. 73 (1998) 1104
15. Bernardini F., Fiorentini V., and Vanderbilt D. Phys. Rev. Lett. 79 (1997) 3958
16. Shi J.J., and Tansley T.L. Solid State Commun. 138 (2006) 26
17. Xia C.X., and Wei S.Y. Phys. Lett. A 359 (2006) 161
18. Vurgaftmana I., Meyer J.R., and Mohan L.R.R. J. Appl. Phys. 89 (2001) 5815
19. Takeuchi T., Wetzel C., and Yamaguchi S. Appl. Phys. Lett. 73 (1998) 1691