Doping-dependent negative differential resistance in hybird organic/inorganic Si-porphyrin-Si junctions

ACS Nano

Volumn 2, Issue 8, 2008, Pages 1517-1522

  Ribeiro, Filipe J ^a,c   Lu, Wenchang ^a,b   Bernholc, Jerzy ^a,b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Doping; Negative differential resistance; Porphyrin; Quantum transport; Silicon

Indexed keywords

CHEMICAL BONDS; METALS; MOLECULAR ORBITALS; NEGATIVE RESISTANCE; PORPHYRINS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON; TRANSITION METALS; TRANSPORT PROPERTIES;

AB INITIO CALCULATIONS; DOPING; DOPING LEVELS; METAL ATOMS; NEGATIVE DIFFERENTIAL RESISTANCE; NEGATIVE DIFFERENTIAL RESISTANCES; ORBITALS; ORGANIC MOLECULES; ORGANIC/INORGANIC; P-N JUNCTIONS; PORPHYRIN; QUANTUM TRANSPORT; QUANTUM TRANSPORT PROPERTIES;

SEMICONDUCTING SILICON COMPOUNDS;

INORGANIC COMPOUND; NANOMATERIAL; ORGANIC COMPOUND; PORPHYRIN; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; IMPEDANCE; MACROMOLECULE; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELECTRIC IMPEDANCE; INORGANIC CHEMICALS; MACROMOLECULAR SUBSTANCES; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; ORGANIC CHEMICALS; PARTICLE SIZE; PORPHYRINS; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES;

EID: 51849163274     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn800252b     Document Type: Article

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