High-performance long-wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Electronics Letters

Volumn 43, Issue 8, 2007, Pages 454-455

  Adolfsson, G ^a   Wang, S M ^a   Sadeghi, M ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THRESHOLD CURRENT DENSITY;

TRIPLE QUANTUM-WELL LASERS;

QUANTUM WELL LASERS;

EID: 34247203201     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20070279     Document Type: Article

References (11)

1. Kondow, M., Kitatani, T., Nakatsuka, S., Larson, M.C., Nakahara, K., Yazawa, Y., Okai, M., and Dorai, K.: 'GaInNAs: a novel material for long-wavelength semiconductor lasers', IEEE J. Sel. Top Quantum Electron., 1997, 3, pp. 719-730
2. Hopkinson, M., Jin, C.Y., Liu, H.Y., Navaretti, P., and Airey, R.: '1.34 μm GaInNAs quantum well lasers with low room-temperature threshold current density', Electron. Lett., 2006, 42, pp. 923-924
3. Wei, Y.Q., Gustavsson, J.S., Sadeghi, M., Wang, S.M., and Larsson, A.; 'Dynamics and temperature-dependence of 1.3-μm GaInNAs doublequantum-well lasers', IEEE J. Sel. Top Quantum Electron., 2006, 42, pp.1274-1280
4. Tansu, N., Yeh, J.Y., and Mawst, L.J.: 'Extremely low threshold-current density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm', Appl. Phys. Lett., 2003, 82, pp. 4038-4040
5. Söderberg, E., Modh, P., Gustavsson, J.S., Larsson, A., Zhang, Z.Z., Berggren, J., and Hammar, M.: 'High speed, high temperature operation of 1.28 μm singlemode InGaAs VCSELs', Electron. Lett., 2006, 42, pp. 978-979
6. Sundgren, P., Berggren, P., Goldman, J.P., and Hammar, M.; 'Highly strained InGaAs/GaAs multiple quantum-wells for laser applications in the 1200-1300 nm wavelength regime', Appl. Phys. Lett., 2005, 87, pp. 0711041-3
7. Takeuchi, T., Chang, Y.-L., Trandon, A., Bour, D., Corzine, S., Twist, R., Tan, M., and Luan, H.-C.: 'Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio', Appl. Phys. Lett., 2002, 80, pp.2445-2447
8. Mogg, S., Chitica, S., Schatz, N.R., and Hammar, M.; 'Properties of highly strained InGaAs/GaAs quantum-wells for 1.2-μm laser diodes', Appl. Phys. Lett., 2002, 81, pp. 2334-2336
9. Wei, Y.Q., Wang, S.M., Wang, X.D., Zhao, Q.X., Sadeghi, M., Tangling, A., and Larsson, A.: 'Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy', J. Crystal Growth, 2005, 278, pp. 747-750
10. Sung, L.W., and Lin, H.H.: 'Highly strained 1.24-nm InGaAs/GaAs quantum-well lasers', Appl. Phys. Lett., 2003, 83, pp. 1107-1109
11. Jiang, D.-S., Qu, Y.-H., Ni, H.-Q., Wu, D.-H., Xu, Y.-Q., and Niu, Z.-C.: 'Optical properties of InGaAs/GaAs quantum wells grown by Sbassisted molecular beam epitaxy', J. Cryst. Growth, 2006, 288, pp. 12-17