Memory effect in MOS structures containing amorphous or crystalline silicon nanoparticles

"2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008"

Volumn , Issue , 2008, Pages 117-120

  Nedev, N ^a,b   Nesheva, D ^b   Manolov, E ^b   Bruggemann R ^c   Meier, S ^c   Levi, Z ^b  

^a UNIVERSIDAD AUTÓNOMA DE BAJA CALIFORNIA   (Mexico)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^c UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DEFECT DENSITY; INERT GASES; METALS; MICROELECTRONICS; NANOCRYSTALS; NANOPARTICLES; PHYSICAL VAPOR DEPOSITION; SILICA; SILICON OXIDES; SILICON WAFERS;

AMORPHOUS SILICON NANOPARTICLES; C-V CHARACTERISTIC; CRYSTALLINE SILICONS; HIGH-TEMPERATURE ANNEALING; NANOPARTICLE FORMATION; RAMAN SCATTERING MEASUREMENTS; RETENTION CHARACTERISTICS; SILICON STRUCTURES;

AMORPHOUS SILICON;

EID: 51749100237     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2008.4559237     Document Type: Conference Paper

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