Memory effect in MIS structures with amorphous silicon nanoparticles embedded in ultra thin SiOx matrix

Journal of Physics and Chemistry of Solids

Volumn 68, Issue 5-6, 2007, Pages 725-728

  Nesheva, D ^a   Nedev, N ^a   Manolov, E ^a   Bineva, I ^a   Hofmeister, H ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

A: Electronic materials; A: Nanostructures; B: Vapour deposition; D: Electrical properties

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ELECTRIC DISCHARGES; ELECTRIC POTENTIAL; SPUTTERING; THERMAL EVAPORATION; ULTRATHIN FILMS;

ALTERNATIVE POLARITIES; ELECTRONIC MATERIALS; FLAT BAND VOLTAGE; THERMAL ANNEALING;

NANOPARTICLES;

EID: 34250180555     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.01.019     Document Type: Article

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