On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al 0.24Ga0.76As metal-semiconductor Schottky gate

Semiconductor Science and Technology

Volumn 21, Issue 3, 2006, Pages 221-227

  Tsai, Yan Ying ^a   Hung, Ching Wen ^a   Lin, Kun Wei ^b   Lai, Po Hsien ^a   Fu, Ssu I ^a   Chuang, Hung Ming ^a   Chen, Huey Ing ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; ELECTRON MOBILITY; HYDROGEN; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL PROCESSING;

GAAS INTEGRATED CIRCUITS (IC); LANGMUIR ISOTHERMS; SIGNAL MODULATIONS; STEADY-STATE PROPERTIES;

GAS DETECTORS;

EID: 32844475805     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/21/3/002     Document Type: Article

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