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Volumn , Issue , 2008, Pages 315-318

System in package with mounted capacitor for reduced parasitic inductance in voltage regulators

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER NETWORKS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; INDUCTANCE; INTERNET PROTOCOLS; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; VOLTAGE CONTROL; VOLTAGE REGULATORS; VOLTAGE STABILIZING CIRCUITS;

EID: 51549104067     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2008.4538962     Document Type: Conference Paper
Times cited : (10)

References (10)
  • 1
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    • M. Shiraishi, et al., "Low Loss and Small SiP for DC-DC Converters", ISPSD Proceedings, May 2005, pp. 175-178.
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    • Shiraishi, M.1
  • 2
    • 27744601909 scopus 로고    scopus 로고
    • Multi Chip Module with Minimum Parasitic Inductance for New Generation Voltage Regulator
    • May
    • Y. Kawaguchi, et al., "Multi Chip Module with Minimum Parasitic Inductance for New Generation Voltage Regulator", ISPSD Proceedings, May 2005, pp. 371-374.
    • (2005) ISPSD Proceedings , pp. 371-374
    • Kawaguchi, Y.1
  • 3
    • 39749102871 scopus 로고    scopus 로고
    • Advanced Power SiP with Wireless Bonding for Voltage Regulator
    • May
    • T. Hashimoto, et al., "Advanced Power SiP with Wireless Bonding for Voltage Regulator", ISPSD Proceedings, May 2007, pp. 125-128.
    • (2007) ISPSD Proceedings , pp. 125-128
    • Hashimoto, T.1
  • 4
    • 0041438343 scopus 로고    scopus 로고
    • A New Power W-Gated Trench MOSFET (WMOSFET) with High Switching Performance
    • April
    • M. Darwish, et al., "A New Power W-Gated Trench MOSFET (WMOSFET) with High Switching Performance", ISPSD Proceedings, April 2003, pp. 24-27.
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  • 5
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    • May
    • P. Goarin, et al., "Split-gate Resurf Stepped Oxide (RSO) MOSFET for 25 V application with record low gate-to-drain charge", ISPSD Proceedings, May 2007, pp. 61-64.
    • (2007) ISPSD Proceedings , pp. 61-64
    • Goarin, P.1
  • 6
    • 4944238509 scopus 로고    scopus 로고
    • Trench Power MOSFET Low-side Switch with Optimized Integrated Schottky Diode
    • May
    • D. Calafut, "Trench Power MOSFET Low-side Switch with Optimized Integrated Schottky Diode", ISPSD Proceedings, May 2004, pp. 397-400.
    • (2004) ISPSD Proceedings , pp. 397-400
    • Calafut, D.1
  • 7
    • 39749116186 scopus 로고    scopus 로고
    • High density MOSBD (UMOS with built-in Trench Schottky Barrier Diode) for Synchronous Buck Converters
    • June
    • S. Ono, et al., "High density MOSBD (UMOS with built-in Trench Schottky Barrier Diode) for Synchronous Buck Converters", ISPSD Proceedings, June 2006, pp. 77-80.
    • (2006) ISPSD Proceedings , pp. 77-80
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  • 8
    • 2342598407 scopus 로고    scopus 로고
    • Two-stage Voltage Regulator for Laptop Computer CPUs and the Corresponding Advanced Control Schemes to Improve Light-load Performance
    • J. Wei, et al., "Two-stage Voltage Regulator for Laptop Computer CPUs and the Corresponding Advanced Control Schemes to Improve Light-load Performance", APEC 2004 Proceedings, February 2004, vol. 2, pp. 1294-1300.
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  • 9
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    • Y. Ren, et al., "Two-Stage Approach for 12-V VR", IEEE Trans. on Power Electronics, vol. 19, No. 6, Nov. 2004, pp. 1498-1506.
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  • 10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.