Trench power MOSFET lowside switch with optimized integrated schottky diode

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 397-400

  Calafut, Daniel ^a  

^a FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONVERTERS; ELECTRIC RECTIFIERS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SWITCHING CIRCUITS; WAVEFORM ANALYSIS;

BIAS VOLTAGE; DIFFUSED JUNCTIONS; POWER LOSS MECHANISMS; TRENCH MOS BARRIER SCHOTTKY (TMBS) DEVICES;

MOSFET DEVICES;

EID: 4944238509     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/wct.2004.240290     Document Type: Conference Paper

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