Transformations of C-type defects on Si(100)-2 × 1 surface at room temperature - STM/STS study

Surface Science

Volumn 602, Issue 17, 2008, Pages 2835-2839

  Sobotík, Pavel ^a   Ošt'ádal, Ivan ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

Author keywords

Scanning tunneling microscopy; Scanning tunneling spectroscopies; Silicon; Surface defects; Surface electronic phenomena (work function, surface potential, surface states, etc.); Surface structure, morphology, roughness, topography

Indexed keywords

ELECTRONIC STRUCTURE; MICROSCOPIC EXAMINATION; OLIGOMERS; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TUNNELING (EXCAVATION);

DEFECT FORMS; SCANNING TUNNELING SPECTROSCOPIES; SURFACE DEFECTS; SURFACE ELECTRONIC PHENOMENA (WORK FUNCTION, SURFACE POTENTIAL, SURFACE STATES, ETC.); SURFACE STRUCTURE, MORPHOLOGY, ROUGHNESS, TOPOGRAPHY;

DEFECTS;

EID: 51249105319     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.07.015     Document Type: Article

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