A new alternative model of type-C defects on Si(1 0 0) surfaces

Surface Science

Volumn 554, Issue 2-3, 2004, Pages 272-279

  Okano, Shinya ^a,b   Oshiyama, Atsushi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Density functional calculations; Silicon; Surface defects; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DIMERIZATION; MICROSCOPIC EXAMINATION; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SURFACE TOPOGRAPHY; WATER;

DENSITY FUNCTIONAL CALCULATIONS; SURFACE DEFECTS; SURFACE ELECTRONIC PHENOMENA;

SILICON;

EID: 1842560285     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.02.015     Document Type: Article

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