Stability of In rows on Si(1 0 0) during STM observation

Surface Science

Volumn 601, Issue 18, 2007, Pages 4506-4509

  Kocan P ^a   Sobotik P ^a   Ost'adal I ^a   Javorsky J ^a   Setvin M ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

Author keywords

1 D organization; Indium; Nanostructures; Scanning tunneling microscopy; Silicon

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ELECTRIC FIELD EFFECTS; SCANNING TUNNELING MICROSCOPY; SILICON;

DYNAMICAL PROPERTIES; SINGLE ATOM PRECISION; TIME CONSTANTS;

INDIUM;

EID: 34548652346     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.04.132     Document Type: Article

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