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Volumn 447, Issue 1, 2000, Pages 156-164
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Electronic structure of the C defects of Si(001) measured by scanning tunneling spectroscope at room and low temperature (80 K)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
DIMERS;
ELECTRONIC STRUCTURE;
ENERGY GAP;
FERMI LEVEL;
SCANNING TUNNELING MICROSCOPY;
SURFACE PHENOMENA;
SCANNING TUNNELING SPECTROSCOPY;
SEMICONDUCTING SILICON;
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EID: 0033879050
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(99)01166-8 Document Type: Article |
Times cited : (22)
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References (22)
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