Electronic structure of the C defects of Si(001) measured by scanning tunneling spectroscope at room and low temperature (80 K)

Surface Science

Volumn 447, Issue 1, 2000, Pages 156-164

  Hata, K ^a   Ozawa, S ^a   Sainoo, Y ^a   Miyake, K ^a   Shigekawa, H ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIMERS; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; SCANNING TUNNELING MICROSCOPY; SURFACE PHENOMENA;

SCANNING TUNNELING SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0033879050     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)01166-8     Document Type: Article

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