Electronic characterization of defect sites on Si(001)-(2 × 1) by STM

Surface Science

Volumn 388, Issue 1-3, 1997, Pages 132-140

  Ukraintsev, V A ^a   Dohnalek Z ^a   Yates Jr , J T ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Single crystal surfaces; Surface electronic phenomena (work function, surface potential, surface states, etc.); Surface relaxation and reconstruction

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; ENERGY GAP; MORPHOLOGY; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE ROUGHNESS;

LOW INDEX SINGLE CRYSTALS; SURFACE RECONSTRUCTION; SURFACE RELAXATION; SURFACE TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 0031247868     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00384-1     Document Type: Article

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