Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 62, Issue 5, 2007, Pages 481-484

  Steen, C ^a   Nutsch, A ^b   Pichler, P ^a,b   Ryssel, H ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

Arsenic; Concentration profile; Interface; Segregation; Silicon

Indexed keywords

ARSENIC; COMPUTER AIDED DESIGN; ETCHING; FLUORESCENCE SPECTROSCOPY; IMPURITIES; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); SILICA;

CONCENTRATION PROFILES; SHRINKING DEVICE DIMENSIONS; X RAY FLUORESCENCE SPECTROMETRY (TXRF);

SILICON;

EID: 34347233391     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2007.04.010     Document Type: Article

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