A new understanding of near-threshold damage for 200 keV irradiation in silicon

Journal of Materials Science

Volumn 40, Issue 14, 2005, Pages 3639-3650

  Stoddard, N ^a   Duscher, G ^a,b   Windl, W ^c   Rozgonyi, G ^a  

^a North Carolina State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CRYSTAL GROWTH FROM MELT; DIFFUSION; ELASTICITY; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON IRRADIATION; POINT DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC ELECTRON-SILICON INTERACTIONS; FLAT ZONE MATERIAL; NEAR-THRESHOLD DAMAGE;

SILICON;

EID: 23744449354     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10853-005-1059-z     Document Type: Article

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19. This area is 1/4 the area of one side of the Si unit cell, about the interaction area of a beam electron
20. This is the probability for interaction in 1 nm thickness, 0.00001, divided by the 4 atoms in 1/4 of the unit cell area over two unit cells' thickness