New insight into NBTI transient behavior observed from fast-GM measurements

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 1065-1067

  Campbell, J P ^a   Cheung, Kin P ^a   Suehle, John S ^a   Oates, Anthony S ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Fast GM; Fast IDVG; Negative bias temperature instability (NTBI)

Indexed keywords

FAST-GM; FAST-IDVG; NEGATIVE BIAS TEMPERATURE INSTABILITY (NTBI); TRANSIENT BEHAVIORS;

EID: 50649092484     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2002074     Document Type: Article

References (17)

1. T. Grasser, B. Kaczer, P. Hehenberger, W. Goes, R. O'Connor, H. Reisinger, W. Gustin, and C. Schlunder, "Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability," in IEDM Tech. Dig., 2007, pp. 801-804.
2. T-measurements," in Proc. IEEE Int. Rel. Phys. Symp. 2006, pp. 448-453.
3. TH transient in NBTI of pMOSFETs with SiON," in IEDM Tech. Dig. 2006, pp. 333-336.
4. T. Yang, C. Shen, M. F. Li, C. H. Ang, C. X. Zhu, Y. C. Yeo, G. Samudra, and D. L. Kwong, "Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric," IEEE Electron Device Lett. vol. 26, no. 10, pp. 758-760, Oct. 2005.
5. 2 gate dielectrics," in Proc. IEEE Int. Rel. Phys. Symp., 2003, pp. 41-45.
6. C. Leroux, J. Mitard, G. Ghibaudo, X. Garros, G. Reimbold, B. Guillaumor, and F. Martin, "Characterization and modeling of hysteresis phenomena in high-κ dielectrics," in IEDM Tech.Dig., 2004, pp. 737-740.
7. T measurements for NBTI degradation: Challenges and opportunities," in IEDM Tech. Dig., 2007, pp. 805-808.
8. A. Savitzky and M. J. E. Golay, "Smoothing and differentiation of data by simplified least squares procedures," Anal. Chem., vol. 36, no. 8, pp. 1627-1639, 1964.
9. J. P. Campbell, K. P. Cheung, J. S. Suehle, and A. Oates, "The fast initial threshold voltage shift: NBTI or high-field stress," in Proc. IEEE Int. Rel. Phys. Symp., 2008, pp. 72-78.
10. V. Huard and M. Denais, "Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in pMOS transistors," in Proc. IEEE Int. Rel. Phys. Symp., 2004, pp. 40-45.
11. D. J. DiMaria and J. H. Stathis, "Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films," J. Appl. Phys., vol. 89, no. 9, pp. 5015-5024, May 2001.
12. 2 under charge injection stress," J. Appl. Phys., vol. 60, no. 6, pp. 2024-2035, Sep. 1986.
13. A. Mallik, J. Vasi, and A. N. Chandorkar, "Electron trapping during irradiation in reoxidized nitrided-oxide," IEEE Trans. Nucl. Sci. vol. 40, no. 6, pp. 1380-1387, Dec. 1993.
14. T. R. Oldham, A. J. Lelis, and F. B. Mclean, "Spatial dependence of trapped holes determined from tunneling analysis and measured annealing," IEEE Trans. Nucl. Sci., vol. NS-33, no. 6, pp. 1203-1209, Dec. 1986.
15. 2 films on Si during electron bombardment," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 15, no. 4, pp. 2081-2084, Jul. 1997.
16. P. Charpenel, P. Girard, and F. M. Roche, "Electrical characterization of oxide in MOS devices using low energy electron beam filling of traps," Microelectron. J., vol. 24, no. 4, pp. 377-380, 1993.
17. W. Weber, M. Brox, R. Thewes, and N. S. Saks, "Hot-hole-induced negative oxide charges in N-MOSFETs," IEEE Trans. Electron Devices vol. 42, no. 8, pp. 1473-1480, Aug. 1995.