Dual-metal-gate transistors with symmetrical threshold voltages using work-function-tuned Ta/Mo bilayer metal gates

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2428-2432

  Matsukawa, Takashi ^a   Liu, Yongxun ^a   Endo, Kazuhiko ^a   Masahara, Meishoku ^a   Ishikawa, Yuki ^a   Yamauchi, Hiromi ^a   Tsukada, Junichi ^a   Ishh, Kenichi ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Dual metal gate; Interdiffusion; Mo; Mobility; Ta; Work function

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); METALS; MOLYBDENUM; MOS DEVICES; MOSFET DEVICES; OPTICAL FILTERS; PROBABILITY DENSITY FUNCTION; SILICON COMPOUNDS; TANTALUM; THRESHOLD VOLTAGE; TRANSISTORS; WORK FUNCTION;

DUAL METAL GATE; INTERDIFFUSION; MO; MOBILITY; TA;

GATE DIELECTRICS;

EID: 50549090812     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2428     Document Type: Article

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