Molybdenum-gate HfO2 CMOS FinFET technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 643-646

  Ha, Daewon ^a   Takeuchi, H ^a   Choi, Y K ^b   King, T J ^a   Bai, W P ^c   Kwong, D L ^c   Agarwal, A ^d   Ameen, M ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c The University of Texas at Austin   (United States)

^d AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HOLE MOBILITY; ION IMPLANTATION; LIGHT SCATTERING; MOLYBDENUM; PHONONS; QUANTUM THEORY; THRESHOLD VOLTAGE; GATE DIELECTRICS; HAFNIUM OXIDES; LEAKAGE CURRENTS; SILICA; TEMPERATURE DISTRIBUTION;

ENERGY BANDGAP; GATE LEAKAGE; INTERFACE TRAPS; PHONON SCATTERING;

FIELD EFFECT TRANSISTORS; FINFET;

CMOS FINFETS; ELECTRONS AND HOLES; FIN WIDTHS; GATE LEAKAGE CURRENT DENSITY; GATE WORK FUNCTION; HFO 2; NITROGEN IMPLANTATION; ORDERS OF MAGNITUDE; SUBTHRESHOLD; TEMPERATURE DEPENDENCE;

EID: 21644434887     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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