Electrical characterization of low-k films with nano-pore structure prepared with DMDMOS/O2 precursors

Surface and Coatings Technology

Volumn 202, Issue 22-23, 2008, Pages 5688-5692

  Kim, Chang Young ^a   Navamathavan, R ^a   Lee, Heon Ju ^a   Choi, Chi Kyu ^a  

^a Jeju National University   (South Korea)

Author keywords

DMDMOS; Electrical properties; Low k; PECVD; SiOC( H) films

Indexed keywords

CARBON FILMS; ELECTRIC CURRENTS; PLASMA DEPOSITION; PLASMAS; SILICON;

DMDMOS; ELECTRICAL CHARACTERIZATIONS; ELECTRICAL PROPERTIES; LOW DIELECTRIC CONSTANT; LOW- K FILMS; LOW-K; NANO PORES; P-TYPE SI; PECVD; SIOC(-H) FILMS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 50449104922     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2008.06.044     Document Type: Article

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