Studies on the low dielectric SiOC(-H) thin films deposited using MTMS and oxygen as precursors by UV source assisted PECVD

Surface and Coatings Technology

Volumn 200, Issue 5-6, 2005, Pages 1624-1628

  Yang, Chang Sil ^a   Kannan, Meera ^a   Choi, Chi Kyu ^a  

^a Jeju National University   (South Korea)

Author keywords

Chemical vapor deposition (CVD); Dielectric properties; Plasma processing and deposition; X ray photoelectron spectroscopy (XPS)

Indexed keywords

CHEMICAL BONDS; COMPOSITION; COMPOSITION EFFECTS; DIELECTRIC FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MIXTURES; NANOSTRUCTURED MATERIALS; OXYGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC CONCENTRATIONS; DIELECTRIC THIN FILMS; METHYLTRIMETHOXYSILANE; PLASMA PROCESSING; PRECURSORS;

SILICON COMPOUNDS;

COATING;

EID: 28844488340     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2005.08.045     Document Type: Article

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