The energy-fine structure of GaInNAs/GaAs multiple quantum wells grown at different temperatures and postgrown annealed

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2909-2913

  Kudrawiec, R ^a   Pavelescu, E M ^b   Andrzejewski, J ^a   Misiewicz, J ^a   Gheorghiu, A ^c   Jouhti, T ^b   Pessa, M ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c HYPERION UNIVERSITY   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BACKSCATTERING; LIGHT POLARIZATION; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; PHOTODIODES; RAMAN SCATTERING; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; X RAY DIFFRACTION;

ANNEALING TEMPERATURE; BLUESHIFT; PHOTOMODULATION; PHOTOREFLECTANCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 5044236165     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1774258     Document Type: Article

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