Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2493-2498

  Gryse, O De ^a   Clauws, P ^a   Van Landuyt, J ^b   Lebedev, O ^b   Claeys, C ^c   Simoen, E ^c   Vanhellemont, J ^d  

^a GHENT UNIVERSITY   (Belgium)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c IMEC   (Belgium)

^d AWI   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

INTERSTITIAL OXYGEN; INVERSE MODELING; OXIDE PHASE; OXIDE PRECIPITATES; OXYGEN PRECIPITATES; SPECTRAL FUNCTION; TRANSMISSION ELECTRON;

ASPECT RATIO; ELECTROMAGNETIC WAVE ABSORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INVERSE PROBLEMS; OXYGEN; SILICON OXIDES; SPECTROSCOPY; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

PRECIPITATES;

EID: 33845402425     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1429800     Document Type: Article

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