Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IR spectroscopy

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 405-410

  De Gryse, O ^a   Clauws, P ^a   Vanhellemont, J ^b,c   Claeys, C ^b  

^a GHENT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

^c SILTRONIC AG   (Germany)

Author keywords

Infrared spectroscopy; Oxygen; Precipitation; Silicon

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; LIGHT ABSORPTION; OXYGEN; PRECIPITATION (CHEMICAL); STOICHIOMETRY;

OCTAHEDRAL OXYGEN PRECIPITATES; PLATELIKE PRECIPITATES;

SEMICONDUCTING SILICON;

EID: 3743150518     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.405     Document Type: Article

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