Three-layer structure of hydrogenated Czochralski silicon

Journal of the Electrochemical Society

Volumn 151, Issue 9, 2004, Pages

  Ma, Y ^a   Job, R ^a   Huang, Y L ^a   Fahrner, W R ^a   Beaufort, M F ^b   Barbot, J F ^b  

^a UNIVERSITY OF HAGEN   (Germany)

^b UNIVERSITÉ DE POITIERS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; GRAPH THEORY; HYDROGENATION; INFRARED RADIATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY;

HYDROGEN-INDUCED PLATELETS (HIP); INTERFACE LAYERS; SUBSURFACE LAYERS;

SILICON WAFERS;

EID: 5044223267     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1781613     Document Type: Article

References (26)

1. Hydrogen in Semiconductors, J. I. Pankove and N. M. Johnson, Editors, Academic Press, New York (1991).
2. Hydrogenated Amorphous Silicon, R. W. Cahn, E. A. Davis, and I. M. Ward, Editors, Cambridge University Press, Cambridge, England (1991).
3. A. Mainwood and A. M. Stoneham, Physica B & C, 116, 101 (1983).
4. J. W. Corbett, S. N. Sahu, T. S. Shi, and L. C. Snyder, Phys. Lett. A, 93, 303 (1983).
5. Y. J. Chabal, G. S. Higashi, and K. Raghavachari, J. Vac. Sci. Technol. A, 7, 2104 (1989).
6. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett., 56, 656 (1990).
7. M. Shinohara, T. Kuwano, Y. Akama, Y. Kimura, and M. Niwano, J. Vac. Sci. Technol. A, 21, 25 (2003).
8. Y. J. Chabal, M. K. Weldon, Y. Caudano, B. B. Stefanov, and K. Raghavachari, Physica B, 273-274, 152 (1999).
9. H. Touir, K. Zellama, and J. F. Morhange, Phys. Rev. B, 59, 10076 (1999).
10. J. D. Holbech, B. Bech Nielsen, R. Jones, P. Sitch, and S. Öberg, Phys. Rev. Lett., 71, 875 (1993).
11. K. Murakami, N. Fukata, S. Sasaki, K. Ishioka, M. Kitajima, S. Fujimura, J. Kikuchi, and H. Haneda, Phys. Rev. Lett., 77, 3161 (1996).
12. N. Fukata, S. Sasaki, K. Murakami, K. Ishioka, M. Kitajima, S. Fujimura, and J. Kikuchi, Jpn. J. Appl. Phys., Part 2, 35, L1069 (1996).
13. E. V. Lavrov, J. Weber, L. Huang, and B. Bech Nielson, Phys. Rev. B, 64, 035204 (2001).
14. B. Bech Nielsen, L. Hoffmann, and M. Budde, Mater. Sci. Eng., B, 36, 259 (1996).
15. A. W. R. Leitch, V. Alex, and J. Weber, Phys. Rev. Lett., 81, 421 (1998).
16. R. Job, A. G. Ulyashin, and W. R. Fahrner, Mater. Sci. Semicond. Process., 4, 257 (2001).
17. M. Bruel, Electron. Lett., 31, 1201 (1995).
18. A. W. R. Leitch, V. Alex, and J. Weber, Solid State Commun., 105(4), 215 (1998).
19. E. V. Lavrov and J. Weber, Phys. Rev. Lett., 87(18), 185502 (2001).
20. R. Job, M. F. Beaufort, J. F. Barbot, A. G. Ulyashin, and W. R. Fahrner, Mater. Res. Soc. Symp. Proc., 719, 217 (2002).
21. R. Job, A. G. Ulyashin, W. R. Fahrner, M. F. Beaufort, and J. F. Barbot, Eur. Phys. J.: Appl. Phys., 23, 25 (2003).
22. R. Job, Y. Ma, Y. L. Huang, A. G. Ulyashin, W. R. Fahrner, M. F. Beaufort, and J. F. Barbot, Diffus. Defect Data, Pt. B, 95-96, 141 (2003).
23. R. Job, A. G. Ulyashin, and W. R. Fahrner, Solid State Phenom., 82-84, 139 (2001).
24. E. V. Lavrov and J. Weber, Phys. Rev. Lett., 89(21), 215501-1 (2002).
25. P. Deak, L. C. Snyder, and J. W. Corbett, Phys. Rev. B, 37(12), 6887 (1988).
26. C. G. Van de Walle, Phys. Rev. B, 49, 4579 (1994).