Plasma characteristics of low-k SiOC(-H) films prepared by using plasma enhanced chemical vapor deposition from DMDMS/O2 precursors

Surface and Coatings Technology

Volumn 202, Issue 22-23, 2008, Pages 5693-5696

  Jung, An Soo ^a   Navamathavan, R ^a   Lee, Kwang Man ^a   Choi, Chi Kyu ^a  

^a Jeju National University   (South Korea)

Author keywords

77.22. d; 77.55.+f; 78.55.Mb; 81.15.Gh; DMDMS; Low k; PECVD; Plasma diagnostics; SiOC( H) films; XPS

Indexed keywords

PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMAS; SILICON; THICK FILMS; VAPORS;

77.22.-D; 77.55.+F; 78.55.MB; 81.15.GH; DMDMS; IN-SITU; LOW DIELECTRIC CONSTANT; LOW-K; PECVD; PLASMA CHARACTERISTICS; SI(100); SIOC(-H) FILMS; THIN FILMS; XPS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 50349087125     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2008.06.045     Document Type: Article

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