Significance of nitrogen and aluminum depth profile control in HfAlON gate insulators

ECS Transactions

Volumn 3, Issue 3, 2006, Pages 41-47

  Ota, H ^a   Ogawa, A ^a   Kadoshima, M ^a   Iwamoto, K ^a   Okada, K ^a   Satake, H ^a   Nabatame, T ^a   Toriumi, A ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC INSULATORS; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; MOSFET DEVICES; NITROGEN;

GATE INSULATORS; MOBILITY DEGRADATION;

GATES (TRANSISTOR);

EID: 33846997233     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355697     Document Type: Conference Paper

References (11)

1. M. Kadoshima, A. Ogawa, M. Takahashi, H. Ota, N. Mise, K. Iwamoto, S. Migita, H. Fujiwara, H. Satake, T. Nabatame, and A. Toriumi, Symp. on VLSI Tech. 2005, p.70.
2. S. H. Bae, C. H. Lee, R. Clark and D. L. Kwong, IEEE Electron Devices Lett., 24 556 (2003).
3. M. Koyama, Y. Kamimuta, M. Koike, M. Suzuki, A. Nishiyama, Jpn. J. Appl. Phys., 43, 1788 (2004).
4. T. Nabatame, K. Iwamoto, K. Yamamoto, K. Tominaga, H. Hisamatsu, M. Ohno, K. Akiyama, M. Ikeda, T. Nishimura, H. Ota, T. Horikawa, A. Toriumi, J. Vac. Sci. Technol. B, 22, 2188 (2004).
5. A. Toriumi, K. Iwamoto, H. Ota, M. Kadoshima, W. Mizubayashi, T. Nabatame, A. Ogawa, K. Tominaga, T. Horikawa, and H. Satake, Microelectronic Engineering 80, 190 (2005).
6. H. Ota, A. Ogawa, M. Kadoshima, K. Iwamoto, W. Mizubayashi, K. Okada, T. Nabatame, H. Satake, A. Toriumi, Ext. Abstr., Int. Conf. on Solid State Devices and Materials (SSDM), 2005, p. 14.
7. T. Nabatame, K. Iwamoto, H. Ota, K. Tominaga, H. Hisamatsu, T. Yasuda, K. Yamamoto, W. Mizubayashi, Y. Morita, N. Yasuda, M. Ohno, T. Horikawa, A. Toriumi, Symp. on VLSI Tech. 2003, p. 25.
8. K. Iwamoto, T. Nishimura, K. Tominga, W. Mizubayashi, H. Hisamatsu, N. Mise, K. Yamamoto, M. Kadoshima, N. Yasuda, H. Ota, T. Horikawa, T. Nabatame, A. Toriumi, Ext., Abstr, Int. Workshop on IWDTF, 2004, p. 15.
9. T. Nabatame, T. Yasuda, M. Nishizawa, M. Ikeda, T. Horikawa, A. Toriumi, Ext. Abstr. Int. Conf. on Solid State Devices and Materials (SSDM), 2002, p. 64.
10. K. Sekine, S. Inumiya, M. Sato, A. Kaneto, K. Eguchi, Y. Tsunashima, IEDM Tech. Dig., 2003, p. 103.
11. S. Saito, D. Hisamoto, S. Kimura, M. Hiratani, IEDM Tech. Dig., 2003, p. 797.