Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric

ECS Transactions

Volumn 6, Issue 1, 2007, Pages 141-148

  Zhao, Yi ^a   Kita, Koji ^a   Kyuno, Kentaro ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; HIGH-K DIELECTRIC; LOGIC GATES; MOISTURE; OXIDE FILMS; OXYGEN VACANCIES; OZONE; SEMICONDUCTOR DOPING;

HIGH PERMITTIVITY; HIGH- K GATE DIELECTRICS; INTRINSIC REACTION; LATTICE ENERGIES; MOISTURE ABSORPTION; MOISTURE RESISTANCE; POSSIBLE MECHANISMS; UV-OZONE TREATMENT;

LANTHANUM OXIDES;

EID: 45849143686     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2727397     Document Type: Conference Paper

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