Behavior of SiC at high temperature under helium with low oxygen partial pressure

Journal of the European Ceramic Society

Volumn 28, Issue 15, 2008, Pages 2995-3004

  Eck, J ^a   Balat Pichelin, M ^a   Charpentier, L ^a   Beche E ^a   Audubert, F ^b  

^a Centre National de la Recherche Scientifique   (France)

^b DEC/SPUA/LTEC   (France)

Author keywords

Corrosion; Nuclear applications; Oxidation; SiC; Surfaces

Indexed keywords

ASTROPHYSICS; BUILDING MATERIALS; CHEMICAL OXYGEN DEMAND; CHEMICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; FAST REACTORS; GAS COOLED REACTORS; HELIUM; INERT GASES; MECHANICAL PROPERTIES; NONMETALS; NUCLEAR PHYSICS; NUCLEAR PROPULSION; NUCLEAR REACTORS; NUMERICAL ANALYSIS; OXIDATION; OXYGEN; POSITIVE IONS; RADIOACTIVITY; RELIABILITY; SILICON; SILICON CARBIDE; TEMPERATURE; TESTING;

ACTIVE-PASSIVE TRANSITION; BEFORE AND AFTER; CORROSION; CRYSTALLOGRAPHIC STRUCTURES; EXPERIMENTAL TESTING; GAS-COOLED FAST REACTORS; GENERATION IV; HIGH TEMPERATURE; KEY FACTORS; LOW OXYGEN PARTIAL PRESSURE; MASS LOSSES; NUCLEAR APPLICATIONS; NUMERICAL STUDIES; OXIDATION TESTS; OXIDIZING SPECIES; PHYSICO CHEMICALS; PHYSICO-CHEMICAL PROPERTIES; SIC; STRUCTURAL MATERIALS; SURFACES; WAGNER MODELS;

PARTIAL PRESSURE;

EID: 49849087788     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2008.04.032     Document Type: Article

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