Effects of junction temperature and its variations on the performance of GaN-based high power flip-chip LEDs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2834-2837

  Lin, L ^a   Chen, Z Z ^a   Pan, H P ^a   Qi, S L ^a   Liu, P ^a   Qin, Z X ^a   Yu, T J ^a   Zhang, B ^a   Tong, Y Z ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT CURRENT; ELECTROLUMINESCENCE SPECTRA; EMISSION PEAKING; FLIP CHIPPING; FLIP-CHIP LED; FLIP-CHIP LEDS; HIGH POWERS; HOT REGIONS; JUNCTION TEMPERATURES; NITRIDE SEMICONDUCTORS; OPTICAL OUTPUT; PEAK WAVELENGTHS; QUANTUM-CONFINED STARK EFFECT; VARIATIONS OF;

CANTILEVER BEAMS; CRYSTALS; DC GENERATORS; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; FLIP CHIP DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; NITRIDES; OPTICAL DESIGN; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

FULL WIDTH AT HALF MAXIMUM;

EID: 49749153449     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674882     Document Type: Conference Paper

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