Formation mechanisms of electrical conductivity and optical properties of ZnO:N film produced by annealing treatment

Chinese Physics Letters

Volumn 25, Issue 8, 2008, Pages 2993-2996

  Wang, Xiang Hu ^a,b   Yao, Bin ^a   Wei, Zhi Peng ^a   Shen, De Zhen ^a   Zhang, Zhen Zhong ^a   Lu, You Ming ^a   Zhang, Ji Ying ^a   Fan, Xi Wu ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b SHANGHAI DIANJI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); EXCITONS; II-VI SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING FILMS; TEMPERATURE; ZINC OXIDE;

ANNEALING TREATMENTS; CHEMICAL STATE; DONOR-BOUND EXCITON; EFFECT OF ANNEALING; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTIVITY; EMISSION BANDS; FORMATION MECHANISM; N-TYPE CONDUCTIVITY; P TYPE CONDUCTIVITY;

METALLIC FILMS;

EID: 49749152434     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/8/070     Document Type: Article

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