Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Chinese Physics

Volumn 13, Issue 4, 2004, Pages 561-563

  Ji, Zhen Guo ^a   Zhao, Shi Chao ^a   Xiang, Yin ^a   Song, Yong Liang ^a   Ye, Zhi Zhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Photoluminescence; Sol gel; Solid phase reaction; Zinc silicate

Indexed keywords

ABSORPTION; PHASE TRANSITIONS; PHOTOLUMINESCENCE; REACTION KINETICS; SILICON WAFERS; SOL-GELS; SYNTHESIS (CHEMICAL); TERBIUM COMPOUNDS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

PHOTOLUMINESCENCE MEASUREMENT; REACTION METHOD; SOLID-PHASE REACTION; ZINC SILICATE;

METALLIC FILMS;

EID: 23244445033     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/13/4/027     Document Type: Article

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