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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 2, 2002, Pages 456-458

Effect of buffer-layer engineering on the polarity of GaN films

(8) Sumiya, M a Yoshimura, K a Ogusu, N a Fuke, S a Mizuno, K b Yoshimoto, M b Koinuma, H b Romano, L T c

a SHIZUOKA UNIVERSITY (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

c PALO ALTO RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EVAPORATION; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; SAPPHIRE; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

COAXIAL IMPACT ION SCATTERING SPECTROSCOPY (CAICISS);

SEMICONDUCTING FILMS;

EID: 0036494436 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1450582 Document Type: Article

Times cited : (15)

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