Ti/Ni bilayer Ohmic contact on 4H-SiC

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1359-1362

  Ohyanagi, Takasumi ^a   Onose, Yasuo ^a   Watanabe, Atsuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ALUMINA; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CONTACT RESISTANCE; ELECTRIC CONNECTORS; ELECTRIC CONTACTORS; ELECTRIC SWITCHGEAR; LIGHT METALS; NICKEL; NICKEL ALLOYS; NICKEL COMPOUNDS; NONMETALS; OHMIC CONTACTS; SILICON; SILICON CARBIDE; TEMPERATURE INDICATING CAMERAS; TITANIUM; TITANIUM CARBIDE; TITANIUM COMPOUNDS;

4H SILICON CARBIDE; AUGER ELECTRON SPECTROSCOPY DEPTH PROFILES; BI LAYERS; BONDING PADS; CARBON STRUCTURES; CONTACT PROPERTIES; HIGH CURRENTS; HIGH-TEMPERATURE ANNEALING; INTERFACE STRUCTURES; NI SILICIDE;

ALUMINUM;

EID: 49749112932     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2949116     Document Type: Article

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