Effect of nitrogen inclusion into Hf-Al-O layer on device properties of Pt/SrBi2Ta2O9/Hf-Al-O/Si diodes

Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy

Volumn 55, Issue 1, 2008, Pages 17-20

  Horiuchi, Takeshi ^a,b   Ohhashi, Kentaro ^b   Takahashi, Mitsue ^a   Sakai, Shigeki ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Data retention; Metal ferroelectric insulator semiconductor FET; Nitrogen inclusion; Nonvolatile memory; Pulsed laser deposition

Indexed keywords

FERROELECTRIC MATERIALS; PULSED LASER DEPOSITION; SECONDARY ION MASS SPECTROMETRY;

DATA RETENTION; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR FET; NITROGEN INCLUSION; NONVOLATILE MEMORY;

SEMICONDUCTOR DIODES;

EID: 42149091621     PISSN: 05328799     EISSN: None     Source Type: Journal    
DOI: 10.2497/jjspm.55.17     Document Type: Article

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