Interfacial properties of thermally oxidized Ta2Si on Si

Surface and Interface Analysis

Volumn 40, Issue 8, 2008, Pages 1164-1167

  Perez Tomas A ^a   Jennings, M R ^a   Mawby, P A ^a   Millan J ^b   Godignon, P ^b   Montserrat, J ^b   Rossinyol, E ^c   Vennegues, P ^d   Stoemenos, J ^e  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^d CRHEA CNRS   (France)

^e ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

High k dielectric; Oxidation; Silicon; Ta2Si; Tantalum pentoxide; Tantalum silicide

Indexed keywords

METALS; NONMETALS; REFRACTORY METALS; SILICON; SILICON COMPOUNDS; TRANSITION METALS;

HIGH-K DIELECTRIC; INTERFACIAL PROPERTIES; MICROELECTRONIC INDUSTRY; OXIDATION; REFRACTORY METAL SILICIDES; SILICON-BASED; TA2SI; TANTALUM PENTOXIDE; TANTALUM SILICIDE;

TANTALUM;

EID: 49749085609     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2859     Document Type: Article

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