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Physical Review B

Volumn 28, Issue 4, 1983, Pages 1965-1977

Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy

(4) Kraut, E A a Grant, R W a Waldrop, J R a Kowalczyk, S P a

a Microelectronics Research and Development Center Rockwell International ^* (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646171801 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.28.1965 Document Type: Article

Times cited : (436)

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