Giant Seebeck coefficient decrease in polycrystalline materials with highly anisotropic band structures: Implications in seeking high-quality thermoelectric materials

Solid State Communications

Volumn 148, Issue 1-2, 2008, Pages 10-13

  Gu, J J ^a,b   Zhang, D ^a   Guo, Q X ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b SAGA UNIVERSITY   (Japan)

Author keywords

A. Semiconductors; A. Single crystals; A. Thermoelectric materials; D. Electronic band structure anisotropy

Indexed keywords

ANISOTROPY; BAND STRUCTURE; COMMUNICATION CHANNELS (INFORMATION THEORY); SEEBECK COEFFICIENT;

A. SEMICONDUCTORS; A. SINGLE CRYSTALS; A. THERMOELECTRIC MATERIALS; BAND STRUCTURES; D. ELECTRONIC BAND STRUCTURE ANISOTROPY; HIGH-QUALITY; PHYSICAL LAWS; POLY-CRYSTALLINE; SINGLE-CRYSTALLINE; THERMOELECTRIC MATERIALS; THERMOPOWER;

POLYCRYSTALLINE MATERIALS;

EID: 49649111583     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.07.026     Document Type: Article

References (38)

1. Service R.F. Science 311 (2006) 1860
2. Service R.F. Science 306 (2004) 806
3. Majumdar A. Science 303 (2004) 777
4. Sales B.C. Science 295 (2002) 1248
5. Tritt T.M. Science 283 (1999) 804
6. Sales B.C. Int. J. Appl. Ceram. Technol. 4 (2007) 291
7. Sales B.C., Mandrus D., and Williams R.K. Science 272 (1996) 1325
8. Snyder G.J., and Toberer E.S. Nature Mater. 7 (2008) 105
9. Dresselhaus M.S., Chen G., Tang M.Y., Yang R.G., Lee H., Wang D.Z., Ren Z.F., Fleurial J.-P., and Gogna P. Adv. Mater. 19 (2007) 1043
10. Hsu K.F., Loo S., Guo F., Chen W., Dyck J.S., Uher C., Hogan T., Polychroniadis E.K., and Kanatzidis M.G. Science 303 (2004) 818
11. Venkatasubramanian R., Siivola E., Colpitts T., and O'Quinn B. Nature 413 (2001) 597
12. Poudel B., Hao Q., Ma Y., Lan Y.C., Minnich A., Yu B., Yan X., Wang D.Z., Muto A., Vashaee D., Chen X.Y., Liu J.M., Dresselhaus M.S., Chen G., and Ren Z.F. Science 320 (2008) 634
13. Mahan G.D. Solid State Phys. 51 (1998) 81
14. DiSalvo F.J. Science 285 (1999) 703
15. Gu J.-J., Oh M.-W., Inui H., and Zhang D. Phys. Rev. B 71 (2005) 113201
16. Inui H. Mater. Res. Soc. Symp. Proc. 886 (2006) 219
17. Gu J.-J., Kuwabara K., Tanaka K., Inui H., Yamaguchi M., Yamamoto A., Ohta T., and Ohara H. Mater. Res. Soc. Symp. Proc. 753 (2003) 501
18. Chung D.-Y., Hogan T., Brazis P., Rocci-Lane M., Kannewurf C., Bastea M., Uher C., and Kanatzidis M.G. Science 287 (2000) 1024
19. Chung D.-Y., Mahanti S.D., Chen W., Uher C., and Kanatzidis M.G. Mat. Res. Soc. Symp. Proc. 793 (2004) 141
20. Chaput L., Hug G., Pécheur P., and Scherrer H. Phys. Rev. B 75 (2007) 035107
21. Chaput L., Hug G., Pécheur P., and Scherrer H. Phys. Rev. B 71 (2005) 121104R
22. Yoo H.-I., Barsoum M., and El-Raghy T. Nature 407 (2000) 581
23. Kim W., Singer S.L., Majumdar A., Vashaee D., Bian Z., Shakouri A., Zeng G., Bowers J.E., Zide J.M.O., and Gossard A.C. Appl. Phys. Lett. 88 (2006) 242107
24. Schweika W., Hermann R.P., Prager M., Perszon J., and Keppens V. Phys. Rev. Lett. 99 (2007) 125501
25. Shi X., Zhang W., Chen L.D., and Yang J. Phys. Rev. Lett. 95 (2005) 185503
26. Hicks L.D., and Dresselhaus M.S. Phys. Rev. B 47 (1993) 12727
27. Choi D.S., Balandin A.A., Leung M.S., Stupian G.W., Presser N., Chung S.W., Heath J.R., Khitun A., and Wang K.L. Appl. Phys. Lett. 89 (2006) 141503
28. Zhai P.C., Zhao W.Y., Li Y., Liu L.S., Tang X.F., Zhang Q.J., and Niino M. Appl. Phys. Lett. 89 (2006) 052111
29. Zide J.M., Klenov D.O., Stemmer S., Gossard A.C., Zeng G., Bowers J.E., Vashaee D., and Shakouri A. Appl. Phys. Lett. 87 (2005) 112102
30. Smith R.A. Semiconductors. 2nd ed. (1978), Cambridge University Press, New York
31. Bergman D.J., and Levy O. J. Appl. Phys. 70 (1991) 6821
32. Bergman D.J., and Fel L.G. J. Appl. Phys. 85 (1999) 8205
33. i is a matrix that relates an electric current density vector and an entropy current density vector with an electric field vector, see Eq. (2) in Ref. [21]. The subscript i means the i th component.
34. For main axes not coincident with each other between CBE and VBE like germanium, a coordinate transformation based on symmetry is needed, which exceeds the length of this report.
35. 1.75 is almost isotropic. Hence, equation in Box I can be used here.
36. Ivanenko L., Shaposhnikov V.L., Filonov A.B., Migas D.B., Behr G., Schumann J., Vinzelberg H., and Borisenko V.E. Microelectron. Eng. 64 (2002) 225
37. Qiu A.N., Zhang L.T., and Wu J.S. Acta Phys. Sin. 56 (2007) 4891 (in Chinese)
38. For example. Madelung O. Semiconductors: Data Handbook. 3rd ed. (2003), Springer, Berlin