Transport properties of semiconducting rhenium silicide

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 225-232

  Ivanenko, L ^a,b   Shaposhnikov, V L ^a   Filonov, A B ^a   Migas, D B ^a,c   Behr, G ^b   Schumann, J ^b   Vinzelberg, H ^b   Borisenko, V E ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b IFW DRESDEN   (Germany)

^c UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Mobility; Rhenium silicide; Transport properties

Indexed keywords

DOPING (ADDITIVES); HOLE MOBILITY; MELTING; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; TRANSPORT PROPERTIES;

RADIATION HEATING;

RHENIUM COMPOUNDS;

EID: 0036776565     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00794-3     Document Type: Conference Paper

References (11)

1. Transport properties
2. 2+x thin films
3. 2-δ single crystals
4. Electrical transport properties of semiconducting rhenium silicide thin films on silicon (111)
5. Electronic properties of semiconducting rhenium silicide
6. Narrow-gap semiconducting silicides: The band structure
7. Accurate and simple analytic representation of the electron-gas correlation energy
8. The crystal structure and some properties of rhenium silicide