Filling fraction limit for intrinsic voids in crystals: Doping in skutterudites

Physical Review Letters

Volumn 95, Issue 18, 2005, Pages

  Shi, X ^a   Zhang, W ^a   Chen, L D ^a   Yang, J ^b  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b GENERAL MOTORS CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONEGATIVITY; FILLING FRACTION LIMIT (FFL); INTRINSIC VOIDS;

ATOMIC PHYSICS; DOPING (ADDITIVES); IMPURITIES; PROBABILITY DENSITY FUNCTION;

CRYSTALS;

EID: 28844435865     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.95.185503     Document Type: Article

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