Anisotropy of mobility ratio between electron and hole along different orientations in ReGe xSi 1.75-x thermoelectric single crystals

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 11, 2005, Pages

  Gu, J J ^a,b   Oh, M W ^b   Inui, H ^b   Zhang, D ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC METHOD; ANISOTROPY; ARTICLE; CHEMICAL COMPOSITION; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRON; HEATING; RADIATION; THERMAL ANALYSIS;

EID: 20044390445     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.113201     Document Type: Article

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