Comparison of different analytical descriptions of the temperature dependence of the indirect energy gap in silicon

Solid-State Electronics

Volumn 39, Issue 9, 1996, Pages 1311-1319

  Passler R ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMPTOTIC STABILITY; MATHEMATICAL MODELS; PHONONS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

ENERGY PARAMETERS; GAP SHRINKAGE COEFFICIENT; HIGH PRECISION FIT;

ENERGY GAP;

EID: 0030241182     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00037-8     Document Type: Review

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