Appropriate analytical description of the temperature dependence of exciton peak positions in GaAs/AlxGa1-xAs multiple quantum wells and the Γ8v-Γ6c gap of GaAs

Journal of Applied Physics

Volumn 82, Issue 5, 1997, Pages 2611-2616

  Passler R ^a   Oelgart, G ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000824299     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366098     Document Type: Article

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