Liquid phase epitaxy growth of m-plane GaN substrate using the Na flux method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 8-11, 2007, Pages

  Iwahashi, Tomoya ^a,b   Kitaoka, Yasuo ^b   Kawamura, Fumio ^b   Yoshimura, Masashi ^b   Mori, Yusuke ^b   Sasaki, Takatomo ^b   Armitage, Rob ^a   Hirayama, Hideki ^c  

^a PANASONIC CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Flux; GaN; LPE; m plane; Non polar; Single crystal; Substrate

Indexed keywords

LIQUID PHASE EPITAXY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS;

SEED CRYSTAL;

GALLIUM NITRIDE;

EID: 34547880397     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L227     Document Type: Article

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