Boron phosphide as the buffer-layer for the epitaxial III-nitride growth: A theoretical study

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 3973-3978

  Ferreira, V A ^a   Leite Alves, H W ^a  

^a FEDERAL UNIVERSITY OF SÃO JOÃO DEL REI   (Brazil)

Author keywords

A1. Adsorption; A1. Surface structure; A3. Atomic layer epitaxy; B1. Nitrides

Indexed keywords

ADSORPTION; ATOMIC PHYSICS; ATOMS; BACKPROPAGATION; BORON; BORON NITRIDE; DIMERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; NITRIDES; NONMETALS; OLIGOMERS; SEMICONDUCTING GALLIUM; THICK FILMS;

A1. ADSORPTION; A1. SURFACE STRUCTURE; A3. ATOMIC LAYER EPITAXY; B1. NITRIDES; BEFORE AND AFTER; BOND ANGLES; BOND LENGTHS; BORON PHOSPHIDE; BUFFER LAYERS; GAN FILMS; GAN THIN FILMS; III NITRIDES; SURFACE DIMERS; TERMINATED SURFACES;

MOLECULAR BEAM EPITAXY;

EID: 49449085789     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.039     Document Type: Article

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