Growth of GaN on Si substrates - Roles of BP thin layer

Optical Materials

Volumn 19, Issue 1, 2002, Pages 223-228

  Nishimura, S ^a   Matsumoto, Satoru ^a   Terashima, Kazutaka ^b  

^a KEIO UNIVERSITY   (Japan)

^b SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; GALLIUM NITRIDE; INTEGRATED OPTOELECTRONICS; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

BORON MONOPHOSPHIDE (BP); EPITAXIAL LAYERS;

OPTICAL MATERIALS;

EID: 0037012267     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00223-3     Document Type: Conference Paper

References (11)