Kinetic Monte Carlo simulation of the nitridation of the GaAs (100) surfaces

Brazilian Journal of Physics

Volumn 36, Issue 2 A, 2006, Pages 305-308

  Castro, A P ^a   Alves, H W Leite ^a  

^a FEDERAL UNIVERSITY OF SÃO JOÃO DEL REI   (Brazil)

Author keywords

GaAs (100) (2 1); Kinetic Monte Carlo simulation; Nitridation

Indexed keywords

EID: 33746066005     PISSN: 01039733     EISSN: 01039733     Source Type: Journal    
DOI: 10.1590/S0103-97332006000300019     Document Type: Conference Paper

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17. The obtained energy barrier for the N diffusion over the As dimers was, numerically, 60.0 eV, a very high value. We cannot affirm that this energy barrier has such value, which it does not make any sense. However, we can only infer, from our numerical results, that this barrier is very high so that, if the N is adsorbed over As dimers, it stays immobile over them without having the chance to diffuse over the surface (i.e., a N trap).
18. We did not include the N diffusion over the As dimers in the kinetic Monte Carlo simulations, once that the As dimers act as a N traps.